document number: 72245 s09-0 870-re v. d, 18-may-09 www.daysemi.jp 1 p-channel 30-v (d-s) mosfet features ? halogen-free acco r ding to iec 61249-2-21 definition ? trenchfet ? power mosfet ? compl iant to rohs directive 2002/95/ec product sum m ary v ds (v) r ds(on) ( )i d (a) - 30 0.042 at v gs = - 10 v - 5.7 0.055 at v gs = - 6 v - 5.0 0. 070 at v gs = - 4.5 v - 4.4 sd sd s d g d so-8 5 6 7 8 t op view 2 3 4 1 s g d p-channel mosfet notes: a. surface mounted on 1" x 1" fr4 board. absolute maximum ratings t a = 25 c , unless otherwise noted parameter symbol 10 s steady state unit drain-source voltage v ds - 30 v gate-source v o ltage v gs 20 contin uous dr ain current (t j = 150 c) a t a = 25 c i d - 5.7 - 4.1 a t a = 70 c - 4.6 - 3.2 pulsed dr ain current i dm - 30 continuous source current (d iode conduction) a i s - 2.3 - 1.1 max imum power dissipation a t a = 25 c p d 2.5 1.3 w t a = 70 c 1.6 0.8 oper ating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance rat i ngs paramet e r symbol typical maximum unit maximum junction-to-ambient a t 10 s r thja 40 50 c/w steady state 70 9 5 maxim um junction-to-foot (drain) steady state r thjf 24 30 dt . www.daysemi.jp
www. daysemi.jp 2 documen t number: 72245 s09-0870-rev. d, 18-may-09 note s : a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. stresses b e yond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parame ter symbol test conditions min. typ. a max. unit static gate threshold v o ltage v gs(th) v ds = v gs , i d = - 250 a - 1 . 0 - 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na z ero gate voltage drain current i dss v ds = - 30 v , v gs = 0 v - 1 a v ds = - 30 v, v gs = 0 v, t j = 70 c - 5 on-state drain current b i d(on) v ds - 10 v, v gs = - 10 v - 20 a v ds - 5 v, v gs = - 4.5 v - 5 drain-source on-state resista nce b r ds(on ) v gs = - 10 v, i d = - 5.7 a 0.033 0.042 v gs = - 6 v, i d = - 5 a 0.043 0.055 v gs = - 4.5 v, i d = - 4.4 a 0.056 0.070 f orw ard transconductance b g fs v ds = - 15 v, i d = - 5.7 a 13 s diode forw a rd voltage b v sd i s = - 2 .3 a, v gs = 0 v - 0.8 - 1.1 v dy nam i c a total gate charge q g v ds = - 15 v, v gs = - 10 v, i d = - 3.5 a 16 2 4 nc gate-source charge q gs 2.3 gate-dra in charge q gd 4.5 gate re si stance r g 8.8 tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 15 i d ? - 1 a, v gen = - 10 v, r g = 6 14 2 5 ns rise time t r 14 25 t ur n-off delay time t d(off) 42 70 fa l l time t f 30 5 0 source-dr ain re verse recovery time t rr i f = - 1.2 a, di/dt = 100 a/s 30 60 dt . www.daysemi.jp
document number: 72245 s09-0 870-re v. d, 18-may-09 www.daysemi.jp 3 typica l c har ac teristics 25 c, unless otherwise noted output characteristic s on -resistance vs. drain current gate charge 0 5 10 15 20 25 30 012345 v gs = 10 v thru 6 v v ds - drain-to-source v oltage (v) i d - drain current (a) 3 v 5 v 4 v r ds(on) - on-resistance () 0.00 0.03 0.06 0.09 0.12 0.15 04 81 2 1620 i d - drain current (a) v gs = 6 v v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0.0 3.2 6.4 9.6 12.8 16.0 v ds = 15 v i d = 3.5 a v gs - gate-to-source voltage (v) q g - t otal gate charge (nc) transfer characteristics capacitan ce on-resistance vs. junction temperature 0 5 10 15 20 25 30 012345 t c = 125 c - 55 c 25 c v gs - gate-to-source v oltage (v) i d - drain current (a) 0 220 440 660 880 1100 0 5 10 15 20 25 30 v ds - drain-to-source v oltage (v) c rss c - capacitance (pf) c oss c iss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 5.7 a t j - junction t emperature (c) r ds(on) - on-resistance (normaliz ed) dt . www.daysemi.jp
www. daysemi.jp 4 documen t number: 72245 s09-0870-rev. d, 18-may-09 ty pi cal ch ara cteristics 25 c, unless otherwise noted source-drain dio de forward voltage threshold voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 150 c 50 1 v sd - source-to-drain v oltage (v) i s - source current (a) 10 t j = 25 c - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a variance (v) v gs(th) t j - t emper ature (c) on-resistance vs. gate-to-so urce voltage single pulse power, junction-to-ambient 0.00 0.04 0.08 0.12 0.16 0.20 0 24681 0 i d = 5.7 a r ds(on) - on-resistance () v gs - gate-to-source v oltage (v) 0 90 150 30 60 pow er (w) time (s) 120 11 0 10 -1 10 - 2 10 - 3 safe operating ar ea , junction-to-foot 100 1 0.1 1 10 100 0.01 10 100 ms 0.1 t c = 25 c single pulse 1 s 10 s dc 10 ms 1 ms limited by r ds(on) * v ds - drain-to-source v oltage (v) * v ds > minimum v gs at which r ds(on) is specified i d - drain current (a) dt . www.daysemi.jp
document number: 72245 s09-0 870-re v. d, 18-may-09 www. daysemi.jp 5 typica l c har ac teristics 25 c, unless otherwise noted normalized th ermal transient impedance, junction-to-ambient 10 - 3 10 - 2 1 10 600 10 - 1 10 - 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wav e pulse duration (s) normalized ef f ectiv e transient thermal impedance 1. duty cycle, d = 2. p er unit base = r thja = 70 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm norm alized t hermal transient impedance, junction-to-foot 10 - 3 10 - 2 11 0 10 - 1 10 - 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized ef f ectiv e transient thermal impedance dt . www. daysemi.jp
document number: 71192 11-s e p-06 www.daysemi.jp 1 dim millimeters inches min max min max a 1.35 1.75 0.05 3 0.069 a 1 0.10 0.20 0.00 4 0.008 b 0 .35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all lea d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (ga ge pla ne) s oic (narrow): 8-lead jedec p a rt n u m b er: ms -012 s package information
www .daysemi.jp d ocument number: 72606 1 revision: 21-jan-08 application note recommended minimum p ads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) return to index re tu rn to index application note
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